LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished

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Sale Price: USD$129.95

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In stock

Item Number: LAOa252505S2

Quantity:

Quantity Discounts - Order a quantity in the range below to receive the discount

Quantity	Amount
20 to 49	USD$123.45
50 to 99	USD$116.96
100 to 200	USD$110.46

LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Specifications

Wafer Size: 1" x 1" x 0.5 mm thickness +/-0.05 mm,

Wafer Orientation: (100) +/-0.5 Deg

Polishing: Two sides CMP polished with free sub-surface damaged. Please choose one side or two side polished from " option "

Surface Roughness: < 10A

Packed Under 1000 class clean room. (EPI ready) and in 100 grade plastic bag in a wafer container.

	Typical Physical Properties
Crystal Structure	Rhombohedral at 25^oC: a=5.357 Angstroms c= 13.22 Angstroms Cubic at > 435 ^oC : a=3.821 Angstroms
Growth Method	Czochralski
Density	6.52 g/cm³
Melt Point	2080 ^oC
Thermal expansion	10 (x10^-6/ ^oC)
Dielectric Constant	~ 25
Loss Tangent at 10 GHz	~3x10^-4@ 300K , ~0.6 x10^-4@77K
Color and Appearance	Tan to Brown based on annealing condition Visible twins on polished substrate.
Chemical Stability	Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC

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LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished

Quantity Discounts - Order a quantity in the range below to receive the discount

Typical Physical Properties

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