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| LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace ZnO and sapphire as optical substrate also. MTI can supply LiAlO2 wafer up to 2" diameter.
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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