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| LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developed crystal with peroviskite structure and twin-free. LSAT has excellent lattice match with high Tc superconductors, GaN and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replaceAl2O3, LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial thin films for GaN, HST and gain magnetic ferro-electronic and superconductive devices. MTI is leading manufacturer in thworld to grow LSAT crystal in own facility. |
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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