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Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors.  Si-Ge alloys wafer are of interest because they have higher mobility than silicon and can be produced with bandgaps between those of silicon and germanium.  This relatively new technology offers opportunities in mixed-signal and anolog circuit IC design and manufacture; the substrates can also be used for epitaxy, photodetectors, high efficiency solar cells, high-performance discrete devices, and other electronic and photonic devices.    MTI provides Se-Ge wafer up to 4" with 2% doping concentration.
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