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Au( highly oriented polycrystalline)/Cr coated SiO2/Si substrate ,4"x0.525 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm


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Item Number: SI-SO-Cr-Au(111) 101D05C1

Silicon Wafer Specifications:

  • Film:         Au/Cr coated SiO2/Si substrate ,4"x0.525 mm,1sp  P-type B-doped,
      • Au(111)=150 nm th with grain size: ~ 50 nm at Room Temperature
      • Cr=20nm
      • SiO2=300 nm
      • Si(100) P type B doped ~525 um Prime Grade
  • Resistivity:                  <0.005 ohm.cm 
  • Substrate Size:            4" diameter +/- 0.5 mm x 0.5 mm
  • Polish:                        one side polished
  • Surface roughness:      < 20 A RMS
  • Maximum Thermal Budget of Pt film: 250 degree C
  


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