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Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C   . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength.  In most silicon-  based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics . MTI provides quality and standard thermal oxide wafer in diameter from 2” to 6”  at the following links.  If you need special layer thickness please contact us at info@mtixtl.com                                             
 
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<2" Thermal Oxide Wafer 
2" Dia. Thermal Oxide Wafer 

3" Dia. Thermal Oxide Wafer 

4" Dia Thermal Oxide Wafer .



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