Aluminum Film on Silicom Wafer, 3 microns / 4" -- Al-Si-100-3um ,Si(100) N-type, R:<0.005 ohm.cm - FmAlonSiAsa101D0525C1FT3um

Aluminum Metallic Film

• Film coated by E-beam evaporation under vacuum below 1xE-6 torr
• evaporation rate: 0.2 nanometer per second
• Aluminum Thickness: 3 microns
• Film Crystallinity:  Weak (111) - oriented polycrystals

Silicon Wafer Specifications:

• Conductive type:         Si  N- type As-doped
• Resistivity:                  <0.005  ohm-cm
• Size:                          4" diameter x 0.525 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  sides  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier
  
• Optional:  you may need tool below to handle the wafer ( click picture to order )

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