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GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
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Item Number: FmGaNonALC50D05C1FT20umSemiUS
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GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
Research Grade
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Sizes 2” Round
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Dimensions 50mm +/- 2mm
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Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
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Conduction Type: n-type,
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Resistivity > 1E6 Ohm-cm
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Front Surface Finish (Ga Face) As-grown
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Back Surface Finish Sapphire as-received finish
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Useable Surface Area >90%
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Edge Exclusion Area 1mm
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Package Single Wafer Container
- GaN layer thickness 20 microns , (+/- 10%)
Macro Defect Density: <=10 cm^-2
Lattice Constant Mismatch: 14% mismatch
Dislocation Density: 5x10^9/ cm^2
Related data
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