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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

Sale Price: USD$249.00

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Item Number: Fm3CSiConSiPc101010S2FT1

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Specifications:

Film: SiC Epi film with 3C structure grown by PECVD

Thickness:1.0um +/- 10%
Orientation: 3C SiC (111)
Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
Type and dopant: N type, Undoped
Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
TTV： 5-29
Bow： -9 ~ 3

Silicon substrate:

Size: 10x10 x 0.525 mm thickness
Orientation: (111)
Type:N type / P doped
Resistivity:1- 10 ohm.cm
Polish: Both sides optical polished

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