Browse Categories
Search

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um


In stock
Item Number: FmGaNonALC0505055S1FT4to5um

GaN  Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

  • Size : 5mmx5mm
  • Substrate Sapphire,  Orientation C (0001) +/- 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  •  Back Surface Finish Sapphire as-received finish
  •  Useable Surface Area >90% 
  •  Edge Exclusion Area 1mm
  •  Package Single Wafer Container
  • GaN layer thickness   4-5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area
 Related data

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsorships:
MTI Sponsors Thermoelectrics Workshop

MTI-UCSD Battery Fabrication Lab


MTI Sponsors the Postdoctoral Awards

Upcoming Shows:

242nd ECS Meeting October 9 - 13 Atlanta GA Booth 200

2022 MRS Fall Meeting Nov 27 - Dec 2 Boston MA

Recent Attended Shows:
John Goodenough 100th Birthday Symposium

2022 MRS Spring Meeting May 8 - 13 Honolulu Hawaii Booth 209


Click here to see our past conferences

 

Notices
1. Prices listed online are valid for the US market and who pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor costs.
3. The prices listed are subject to change without notice.