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GaN (N type, undoped) Template (100nm) on Si (111) N-type P-doped, 5x5x0.279mm,1sp R:1-10 ohm.cm


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Item Number: FmGaNonSiPc05050279C1FT100

GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 
  • Nominal GaN thickness:            0.1μm ± 0.1 μm
  • Front Surface finish (Ga-face):    <1nm RMS,  As-grown,

  • Back surface finish:                   Silicon ( 111) N-type P-doped R:1-10 ohm.cm

  • GaN orientation:                        C-plane (00.1)
  • Polarity:                                   Ga-face
  • Conduction Type:                      Undoped (N-) and resistivities: < 0.05 Ohm-cm
  • Macro Defect Density:               <1/cm^2
  • Wafer base:                              Silicon [111], 5x5x0.279mm, one side polished
  • There is ~200nm AlN buffer layer between the silicon and GaN 
Related data

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