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GaN Template on Si<111> 4''dia. GaN thickness: 500 nm+/-100nm, Si(111) N-type ,P-doped ,R:1-5 ohm.cm


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Item Number: FmGaNonSiPc101D05C1FT500nmUS

GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications 
  • Research Grade , about 90 % useful  area
  • Nominal GaN thickness:              0.5μm ± 0.1 μm
  • Front Surface finish (Ga-face):      <1nm RMS,  As-grown 
  • Back surface finish:                     as received
  • GaN orientation:                          C-plane (00.1)
  • Polarity:                                      Ga-face
  • Conduction Type:                        Undoped (N-)  
  • Wafer base:                                Silicon [111], N-type P-doped  R:1-5 ohm.cm;  4" diameter x 0.5mm, one side polished
  • There is ~200nm AlN buffer layer between the silicon and GaN 

 Related data



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