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GaN (0001) Template (N+ ,Si-doped) on Sapphire, 2" x 5um, 1sp - FmGaNSionALc50D05C1US


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Item Number: FmGaNSionALc50D05C1US
  •  Research Grade , about 90 % usable  area
  • GaN template, N+, 2” in diameter
  • Nominal GaN Thickness: 5 um +/-  1um 
  • 2” in dia, N+(Si-doped)
  • Concentration:              ~1E18/cc
  • Resistivities:                 < 0.02 Ohm-cm
  • Front side surface:        As grown
  • Back side surface:        Substrate as received
  • Polarity:                       Ga-face
  • Substrate:
  • Sapphire Substrate, 2”. C-plane, 1.00 degree offcut toward  a-plane direction,
  • Single side polished, 430 um
  • Growth method: HVPE (Hydride Vapor Phase Epitaxy) 
  • Please click here for the surface data.

 

 

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