GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2

Sale Price: USD$599.00

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In stock

Item Number: GPSc50D05C2

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Quantity Discounts

Quantity	Amount
25 to 50	USD$569.05

GaP single crystal wafer,

Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),

Doping: S-doped,

Conducting type: N-type,

Orientation: (111)+_30'

Edge Orientation: (110)^±1°

Polished:Both sides polished.

Surface finish (RMS or Ra) : < 8A

	Typical Physical Properties
Crystal Structure	Cubic. a =5.4505 ?‡3
Growth Method	CZ (LEC)
Density	4.13 g/cm³
Melt Point	1480 ^oC
Thermal Expansion	5.3 x10^-6 / ^oC
Dopant	S doped	undoped
Crystal growth axis	<111> or <100>	<100> or <111>
Conducting Type	N	N
Carrier Concentration	2 ~ 8 x10¹⁷ /cm³	4 ~ 6 x10¹⁶ /cm³
Resistivity	~ 0.03 W-cm	~ 0.3 W-cm
EPD	< 3x10⁵	< 3x10⁵

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