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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
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In stock
Item Number: FmInGAonIPFea50D035C2FT500US5
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2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition
Substrate:
- InP Orientation: (100)
- Doped with Fe, Semi-Insulating
- Wafer size: 2" diameter x 0.35 mm
- Resistivity:>1x10^7 ohm.cm
- Both sides polished
EPI Film :
- N-type InGaAs(Si-doped), (100)
- Nc>2x10^18 /cc
- Film Thickness :0.5 um (+/- 20%)
- Roughness of epi-layer is close to 1 mono-layer (ML)
- One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.
EPI ready surface and packing
Typical Properties
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Dopant
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Type
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Carrier Concentration
( cm-3)
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Mobility
( cm2/V.Sec)
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Resistivity
( ohm-cm )
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EPD
(cm-2)
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Undoped
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N
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7.5-9.5 x1015
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4300-4400
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1.6E-1-4.5E-1
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<5000
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Sn
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N
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0.5 ~1.0 x1018
0.5 ~1.0 x1018
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200 ~ 2400
1500 ~ 2000
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0.001 ~ 0.002
0.0025~0.007
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3~5 x104
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Zn
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P
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0.8 ~ 2.0 x1018
2.5 ~ 4.0 x1018
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2500 ~ 3500
1300 ~ 1600
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0.0025 ~ 0.006
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1~ 3 x104
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Fe
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Semi-Insulating
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N/A
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1550-1640
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(2.1-2.7) x107 |
<5000
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