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LaAlO3, (100) orn. 20x20 x 0.5mm substrate , one side polished


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Item Number: LAOa202005S1US

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3  crystal are well suitable for low loss microwave and dielectric resonance applications.

 

Specifications

Wafer Size:                    20x20 x  0.5 mm thickness +/-0.05 mm,

Wafer Orientation:         (100) +/-0.5 Deg 

Polishing:                       One sides CMP polished with free sub-surface damaged.  

Surface finish (RMS or Ra) :     < 10A

Packed                          Under 1000 class clean room. (EPI ready) and in 100 grade plastic bag in a wafer container.

Lattice Constant:   a=3.792Å (Pseudocubic )

  • Warning: LaAlO3 crystal  has a visible twin on a polished surface, which is normal nature .

 

 

 

 

Typical Physical Properties

Crystal Structure

Pseudo cubic    a=3.792Å 

Growth Method

Czochralski

Density

6.52   g/cm3

Melt Point

2080 oC        

Thermal expansion

 10 (x10-6/ oC)

Dielectric Constant

~ 25 

Loss Tangent at 10 GHz

~3x10-4 @ 300K ,       ~0.6 x10-4 @77K

Color and Appearance

Tan to Brown based on annealing condition

Visible twins on polished substrate.

Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC

 

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