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300 nmSilicon Nitride Film (LPCVD) on Si(100), N-type, P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm - FmSi3N4onSiPa100D0525C1FT300


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Item Number: FmSi3N4onSiPa100D0525C1FT300

Silicon Nitride Film

  • Si3N4 Film coated by low stress LPCVD method
  • Si3N4 Thickness:   300 nm  +/- 10%
  • Si3N4 covers both side of Silicon wafer
  • Refractive Index of Si3N4: 1.95 - 2.05

Silicon Wafer Specifications:

  • Conductive type:        Si   N- type, P-doped
  • Resistivity:                 1-20 ohm-cm
  • Size:                          4" diameter +/- 0.5 mm x  0.525 +/- 0.025 mm th
  • Orientation:                (100) +/- 0.5o
  • Polish:                        One  sides  polished
  • Surface roughness:     Prime
  • Packing:                      Vacuum packed on a 4" single wafer carrier box
  • Optional:  you may need tool below to handle the wafer ( click picture to order )


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