SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 10x10x0.5mm, 1sp

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Item Number: SGGGc101005S1

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SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films

Composition: （Gd2.6Ca0.4)（Ga4.1Mg0.25Zr0.65）O12
Size: 10 mm x 10 mm x 0.5 mm
Orientation: (111) +/-0.5°
Polish: one side EPI polished
Surface Roughness: < 10A by AFM 5x5 microm area

	Physical Properties of SGGG
Composition	（Gd2.6Ca0.4)（Ga4.1Mg0.25Zr0.65）O12
Crystal Structure	Cubic: a =12.480 Å ,
Molecular wDielectric constanteight	968,096
Melt Point	~1730 ^oC
Density	~ 7.09 g/cm³
Hardness	~ 7.5 ( mohns)
Refractive index	1.95
Dielectric constant	30
Dielectric loss tangent (10 GHz)	ca. 3.0 * 10^_4
Crystal growth method	Czochralski
Crystal growth direction	<111>
Crystal Color
XRD

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