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SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films
Physical Properties of SGGG
Composition
(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
Crystal Structure
Cubic: a =12.480 Å ,
Molecular wDielectric constanteight
968,096
Melt Point
~1730 oC
Density
~ 7.09 g/cm3
Hardness
~ 7.5 ( mohns)
Refractive index
1.95
Dielectric constant
30
Dielectric loss tangent (10 GHz)
ca. 3.0 * 10_4
Crystal growth method
Czochralski
Crystal growth direction
<111>
Crystal Color
XRD
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