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SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 10x10x0.5mm, 1sp
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In stock
Item Number: SGGGc101005S1
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SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films
- Composition: （Gd2.6Ca0.4)（Ga4.1Mg0.25Zr0.65）O12
- Size: 10 mm x 10 mm x 0.5 mm
- Orientation: (111) +/-0.5°
- Polish: one side EPI polished
- Surface Roughness: < 10A by AFM 5x5 microm area
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Physical Properties of SGGG
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Composition
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（Gd2.6Ca0.4)（Ga4.1Mg0.25Zr0.65）O12
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Crystal Structure
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Cubic: a =12.480 Å ,
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Molecular wDielectric constanteight
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968,096
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Melt Point
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~1730 oC
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Density
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~ 7.09 g/cm3
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Hardness
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~ 7.5 ( mohns)
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Refractive index
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1.95
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Dielectric constant
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30
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Dielectric loss tangent (10 GHz)
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ca. 3.0 * 10_4
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Crystal growth method
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Czochralski
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Crystal growth direction
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<111>
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Crystal Color
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XRD
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