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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 - Fm300SOonSIAsa50D05C

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Item Number: Fm300SOonSIAsa50D05C1R0005US

Thermal oxide Layer

  • Research Grade, about 80 % useful  area
  • SiO2 layer on 2" Silicon wafer
  • Oxide layer thickness: 300 nm ( 3000A) +/-10%
  • Refractive index: 1.455

Silicon Wafer Specifications:

  • Conductive type:          N type/ As- doped 
  • Resistivity:                  0.001-0.005 ohm-cm
  • Size:                           50.8 diameter +/- 0.5 mm x 0.50 +/- 0.025 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                         one side polished
  • Surface roughness, Ra: < 5A (RMS)

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