Browse Categories
Search

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C


In stock
Item Number: Fm300SOonSIAsa50D05C1R0005US

Thermal oxide Layer

  • Research Grade, about 80 % useful  area
  • SiO2 layer on 2" Silicon wafer
  • Oxide layer thickness: 300 nm ( 3000A) +/-10%
  • Refractive index: 1.455

Silicon Wafer Specifications:

  • Conductive type:          N type/ As- doped 
  • Resistivity:                  0.001-0.005 ohm-cm
  • Size:                           50.8 diameter +/- 0.5 mm x 0.50 +/- 0.025 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                         one side polished
  • Surface roughness, Ra: < 5A (RMS)

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsorships:
MTI Sponsors Thermoelectrics Workshop

MTI-UCSD Battery Fabrication Lab

MTI Sponsors the Postdoctoral Awards


Upcoming Shows:

2024 MRS Spring April 22-26 Seattle WA Booth 315

AABC Europe May 13-16 Strasbourg France Booth 408

245th ECS Meeting May 26-30 San Francisco CA Booth 108

Recent Attended Shows:
ACS Spring 2024 March 17-21 New Orleans LA Booth 3338

41st International Battery Seminar Exhibit March 12-15 Orlando FL Booth 1320

Click here to see our past conferences

 
Notices
1. Prices listed online are valid for the US market and who pay by credit card only. There will be extra charges for shipping & handling. Prices vary from country to country.
2. We may add extra charges for paper orders and NET 30 terms due to extra labor costs.
3. The prices listed are subject to change without notice.