SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)

Device Layer

Size:

10x10

Type/Dopant:

N type/P-doped

Orientation:

<1-0-0>+/-0.5 degree

Thickness:

2.5±0.5µm

Resistivity:

1-4 ohm-cm

Finish:

Front Side Polished

Buried Thermal Oxide:

Thickness:

1.0 um +/-  0.1 um

Handle Wafers:

Type/Dopant

P type/B-doped

Orientation

<1-0-0>+/-0.5 degree

Resistivity:

10-20 ohm.cm

Thickness:

625 +/- 15 um

Finish:

As received (not polished)