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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )


In stock
Item Number: FmSOIa152D0625C1
Specifications
 

Device Layer

Diameter:

 

6" 

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0um +/- 0.1 um

 

Handle Wafers:

Type/Dopant

P Type, B doped

Orientation

 

<1-0-0>+/-.5 degree

Resistivity:

 

10-20 ohm-cm

Thickness:

 

625 +/- 15 um

Finish:

 

As-received (not polished)


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