Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,

Sale Price: USD$895.00

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Item Number: FmSOS100DD046C2FT10US

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Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al₂O₃) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation.

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SOS(Silicon on Sapphire) Wafers (DSP-Double sides polished)

Silicon EPI Layer:

Silicon Orientation: (100)
Type, Dopant: Intrinsic type, undoped
Silicon Thickness: 1.0 um +/- 10%
Resistivity: > 100 ohm.cm
Micro-particle density ( for particles > 2 um) < 2/cm^2

Sapphire Wafer:

R plane -- (1-102) with single flat
Purity: 99.996%
Wafer size: 100 mm dia x 0.46 mm thickness
Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
Front surface: Epi-polished (Ra < 4nm)
Back surface: Optical grade polish
TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat