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4" SiC-3C N type Film and CMP on both sides of Silicon (100) N-type Wafer after epitaxy growth, 3.2 micron film Thickness after polishing

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Item Number: C-3CP-a-101D0525C2-3.2um-US


  • Film:  SiC   film with 3C structure grown by PECVD
    • Thickness: 3200 nm +/- 10%    
    • Orientation:3C SiC (100)
    • Surface: CMP  ( film chemical mechanical polished )
    • Target doping level: 1.0E17 - 1.0E18 /cc  
    • Type and dopant:  N type, Nitrogen doping
    • Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
    • TTV: 16
  • Silicon substrate:   
    • Size: 100 mm dia x 0.525 mm thickness 
    • Orientation:  (100)
    • Type:  N type / P doped 
    • Resistivity: 1- 10 (resistivities is dependent on the doping level)
    • Polish: Both sides optical polished

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