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AlN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than Al2O3. It is an ideal substrate for
electronic thick and thin film applications.

Aluminum Nitride Ceramic Substrates Properties

Item No. AlN-140 AlN-170 AlN-180 AN5113 AN5116
Purity (wt%) 99% 99% 99% 98% 99%
Density (g/cm3) 3.24 3.31 3.31 >3.25 >3.26
Thermal Conductivity (W/m. K) 140+/-10 >=170 180+/-10 100-300 >170
Thermal Expansion (x10-6/oC) < 5.6 4.4 < 5.6 <4.3 <4.2
Dielectric Strength (Kv/mm) >=25 >=15 >20 >15 >15
Dielectric Constant (at 1MHZ) 8.6 9 8.6 8.7 8.7
Loss Tangent (x104@1 MHz) 5 2 5 3-7 3-7
Volume Resistivity (ohm-cm) >1012 >1014 >5x1012 >1014 >1014
Flexural Strength (Kgf/mm2) 35.7 >35.7 > 30.6 >25 >30
Surface Roughness (micron) in Ra   as polished: 0.05 um or 2 microinch in Ra as polished: 0.1 um or 4 microinch in Ra as fired: 0.3
as lapped: 0.075 
as polished: 0.025
as fired: 0.3 
as lapped: 0.075 
as polished: 0.025


For SDS of AlN Ceramic,  please click here.
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