Constants,
Energy Gaps, and Physical Propertiesof Semiconductor related Crystals
Source: Sze, S.M., Physics of Semiconductor Device,
, Wiley Interscience Publication, 1981, pp. 848-849.
|
Material System
|
Element or Compound
|
Name
|
Structure1
|
Lattice
Constant
(A) at 300 K
|
Band Gap (ev) at 300 K
|
Band2
|
|
IV
|
C
|
Carbon (diamond)
|
D
|
3.56683
|
5.47
|
I
|
|
|
Ge
|
Germanium
|
D
|
5.64613
|
0.66
|
I
|
|
|
Si
|
Silicon
|
D
|
5.43095
|
1.12
|
I
|
|
|
Sn
|
Grey Tin
|
D
|
6.48920
|
0.00
|
D
|
|
IV-IV
|
SiC
|
Silicon carbide
|
W
|
a = 3.086,
c= 15.117
|
2.996
|
I
|
|
III-V
|
AlAs
|
Aluminum arsenide
|
Z
|
5.6605
|
2.16
|
I
|
|
|
AlP
|
Aluminum phosphide
|
Z
|
5.4510
|
2.45
|
|
|
|
AlSb
|
Aluminum antimonide
|
Z
|
6.1355
|
1.58
|
I
|
|
|
BN
|
Boron nitride
|
Z
|
3.6150
|
~7.5
|
I
|
|
|
BP
|
Boron phosphide
|
Z
|
4.5380
|
2.0
|
|
|
|
GaAs
|
Gallium arsenide
|
Z
|
5.6533
|
1.42
|
D
|
|
|
GaN
|
Gallium nitride
|
W
|
a = 3.189,
c = 5.185
|
3.36
|
|
|
|
GaP
|
Gallium phosphide
|
Z
|
5.4512
|
2.26
|
I
|
|
|
GaSb
|
Gallium antimonide
|
Z
|
6.0959
|
0.72
|
D
|
|
|
InAs
|
Indium arsenide
|
Z
|
6.0584
|
0.36
|
D
|
|
|
InP
|
Indium phosphide
|
Z
|
5.8686
|
1.35
|
D
|
|
|
InSb
|
Indium antimonide
|
Z
|
6.4794
|
0.17
|
D
|
|
II-VI
|
CdS
|
Cadmium sulfide
|
Z
|
5.8320
|
2.42
|
D
|
|
|
CdS
|
Cadmium sulfide
|
W
|
a = 4.16,
c = 6.756
|
2.42
|
D
|
|
|
CdSe
|
Cadmium selenide
|
Z
|
6.050
|
1.70
|
D
|
|
|
CdTe
|
Cadmium telluride
|
Z
|
6.482
|
1.56
|
D
|
|
|
ZnO
|
Zinc oxide
|
R
|
4.580
|
3.35
|
D
|
|
|
ZnS
|
Zinc sulfide
|
Z
|
5.420
|
3.68
|
D
|
|
|
ZnS
|
Zinc sulfide
|
W
|
a = 3.82,
c = 6.26
|
3.68
|
D
|
|
|
ZnSe
|
Zinc selenide
|
Z
|
5.668
|
2.71
|
D
|
|
|
ZnTe
|
Zinc telluride
|
Z
|
6.103
|
2.393
|
D
|
|
IV-VI
|
PbS
|
Lead sulfide
|
R
|
5.9362
|
0.41
|
I
|
|
|
PbSe
|
Lead selenide
|
R
|
6.126
|
0.27
|
I
|
|
|
PbTe
|
Lead telluride
|
R
|
6.4620
|
0.31
|
I
|
1. D = Diamond, W = Wurzite, Z = Zincblende, R = Rock Salt
2. I = Indirect, D = Direct
3. At ~ 2K.