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Cu Film on Ti/Silicon Wafer, 4" , Cu=100 nm Ti=20nm,,Si(100) B-doped ,4" x0.525mm,R:1-20 ohm.cm, 1sp


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Item Number: u/Ti- coated Si-100D0525C1

Specifications:

  • Cu coated Si Wafer (4 inch size)
  • Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
  • Thickness of Ti diffusion barrier: 20 nm
  • 4 inch dia x0.525 mm thickness Si wafer (Prime Grade)
  • P type, B doped, <100> orientation, SSP
  • Resistivities: 1-20 ohm-cm
  • Surface Roughness:   as grown ,  RA < 10 nm
  • Package: One 1000 class clean room with 100 class plastic bag

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