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Cu Film Coated on Ta/SiO2/Si Wafer 4" , 100 nm Thick, - Cu-SiO2-Si-4-100n


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Item Number: Cu-SiO2-Si-4-100n

Specifications:

  • Cu coated SiO2/Si  Wafer (4 inch size)
  • Thickness of Cu polycrystalline <111> film: 100 nm
  • Thickness of Ta diffusion barrier: 50 nm
  • 4 inch dia SiO2/ Si wafer (Prime Grade)
    • P type, B doped, <100> orientation, Singe side polished
    • Resistivities: 1-20 ohm-cm
    •  thermal oxide: 300 nm thickness
  • Surface Roughness: as grown
  • Package: One 1000 class clean room with 100 class plastic bag


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