Browse Categories
Search

Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. MTI currently offers GaN substrates to fill the needs of many applications. Detailed product descriptions and specification sheets are listed below and you can order from the secure on-line system.  If you have any further questions, please contact us at 1-888-525-3070 or email to info@mtixtl.com. Our engineers will assist you immediately.


GaN Single Crystal
GaN Template on Sapphire

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsorships:
MTI Sponsors Thermoelectrics Workshop

MTI-UCSD Battery Fabrication Lab


MTI Sponsors the Postdoctoral Awards

Upcoming Shows:
2019 MRS Spring April 22 - 26 Phoenix AZ Booth 501

AABC 2019 Jun 24-27 San Diego CA Booth 32

ICT/ACT 2019 Jun 30 - July 4 Gyeongju South Korea

Recent Attended Shows:
36th International Annual Battery Seminar & Exhibit Mar 25-28 Fort Lauderdale FL

TMS 2019 March 10-14 San Antonio TX


APS March Meeting 2019 March 4-8 Boston MA


Click here to see our past conferences

 

Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.