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Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. MTI currently offers GaN substrates to fill the needs of many applications. Detailed product descriptions and specification sheets are listed below and you can order from the secure on-line system.  If you have any further questions, please contact us at 1-888-525-3070 or email to info@mtixtl.com. Our engineers will assist you immediately.


GaN Single Crystal
GaN Template on Sapphire

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