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Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um

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Item Number: FmGaNonALC76D05C1FT5umSemiUS

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.


  • Semi-Insulating GaN Epitaxial Template on Sapphire (C plane)
  • Sizes:  3” Round
  • Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 o
  • Conduction Type: n-type,undoped
  • Typical Macro Defect Density:< 5cm-2
  • Resistivity:>10^6 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  •  Back Surface Finish Sapphire as-received finish
  •  Useable Surface Area >90% 
  •  Edge Exclusion Area 1mm
    Typical Macro defect Density: <5cm^-2
  •  Package Single Wafer Container
  • GaN layer thickness   5 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area
 Related data



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