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GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um


In stock
Item Number: FmGaNonALC50D05C1FT30um

-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications:
        Production grade

  • Sizes 2” Round
  • Dimensions 50.8mm  +/- 0.25mm
  • Substrate Sapphire,  C-plane-(0001) with 0.2 degree miscut toward M-plane
  • Conduction Type: N-type,
  • Resistivity :N/A
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90% 
  • Edge Exclusion Area 1mm
  • Package Single Wafer Container
  • GaN layer thickness  : 30 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area

Macro Defect Density:             <=5 cm^-2
Lattice Constant Mismatch:   14%  mismatch
Dislocation Density:               5x10^9/ cm^2

Related data



 

 

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