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GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick

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Item Number: FmGaNonALC101005S1FT30umUS5

GaN  Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate


  • Sizes 10mmx10mm x0.5mm 
  • Substrate Sapphire,  Orientation C (0001) +/- 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  •  Back Surface Finish Sapphire as-received finish
  •  Useable Surface Area >90% 
  •  Edge Exclusion Area 1mm
  •  Package Single Wafer Container
  • GaN layer thickness   30 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

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