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LaAlO3,(100) ori. 10x10x 0.5mm substrate , 2 side EPI polished - LAOa101005S2


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Item Number: LAOa101005S2

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30 to 49USD$43.65
50 or moreUSD$41.35

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.


Substrate Specifcations:

  • Wafer Size:     10 x 10 x 0.5 mm thickness +/-0.05 mm,
  • Wafer Orientation:   (100) +/-0.5 Deg 
  • Polishing:   Two sides CMP polished with free sub-surface damaged. 
  • Surface finish (RMS or Ra) :  < 10A
  • Package:    Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
  • Lattice Constant:   a=3.792Å (Pseudocubic )
  • Warning: LaAlO3 crystal  has a visible twin on a polished surface, which is normal nature .

Typical Physical Properties

Crystal Structure


Pseudo cubic    a=3.792Å 

Growth Method

Czochralski

Density

6.52   g/cm3

Melt Point

2080 oC        

Thermal expansion

 10 (x10-6/ oC)

Dielectric Constant

~ 25 

Loss Tangent at 10 GHz

~3x10-4 @ 300K ,       ~0.6 x10-4 @77K

Color and Appearance

Transparent to Brown based on annealing condition. Visible twins on polished substrate

Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC



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