LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished

LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Substrate Specifcations:

• Wafer Size:     10 x 10 x 1.0 mm thickness +/-0.05 mm,
• Wafer Orientation:   (100) +/-0.5 Deg 
• Polishing:   One side CMP polished with free sub-surface damaged. 
• Surface finish (RMS or Ra) :  < 10A
• Package:    Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
• Lattice Constant：   a=3.792Å （Pseudocubic ）
• Warning: LaAlO3 crystal  has a visible twin on a polished surface, which is normal nature .
• For detailed physical properties of LaAlO3 crystal, please click here
• For typical crystal rocking curve, please click here
• For MSDS, please click here
• For the AFM of LaAlO3, please click here.
• If you need a certificate of analysis, please click here

Typical Physical Properties

Crystal Structure

Pseudo cubic    a=3.792Å 

Growth Method

Czochralski

Density

6.52   g/cm³

Melt Point

2080 ^oC        

Thermal expansion

 10 (x10^-6/ ^oC)

Dielectric Constant

~ 25 

Loss Tangent at 10 GHz

~3x10^-4 @ 300K ,       ~0.6 x10^-4 @77K

Color and Appearance

Transparent to Brown based on annealing condition. Visible twins on polished substrate

Chemical Stability

Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC