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Substrate Specifications
Typical Specifications
Crystal Structure
Trigonal: a= b= 7.190 A, c=7.367 A, alpha=beta =90o, gama =120o
Growth Method
Bridgman
Melting Point
1493 oC
Crystal Purity
> 99.9%
Crystal Growth Direction
< 0001 >
Density
5.936 g/cm3
Hardness
4.5 (Mohs)
Thermal Expansion
11.9 x10-6/ K // c 15.8 x10-6/ K // a
Thermal Conductivity
5.1 W / m.k @ 300K
Optical Transmission Range
Up to 10.5 micron wavelength
ho : 1.63 he: 1.597
Orientation
<0001> +/- 0.5o
Standard Boule
10 ~ 50 mm diameter
Other Crystal wafer A-Z
Plasma Cleaner
Wafer Containers
Dicing saw
Film Coater
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