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Performance PBN's properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.

  • Good thermal conductivity
  • High insulation resistance
  • High dielectric strength over wide temperature ranges.
  • Extremely pure
  • Non-wetting
  • Non-toxic 
  • Non-reactive to most other compounds
  • Withstands high temperatures and rapid cooling

Performance PBN will not react with acids, alkalis, organic solvents, molten metals, or Graphite. Bulk impurity levels are less than 100 parts per million with metallic impurities less than 10 parts per million. It withstands 1800° C in vacuum and 2000° C in nitrogen, showing no melting point, making it an excellent choice for furnace components and melting vessels. Crucibles heated to 1200° C can be plunged into liquid Nitrogen without visible damage. PBN-coated Graphite heating elements provide extremely uniform temperature profiles for both compound and Silicon semiconductor manufacturing.

The anisotropic conductivity of Performance PBN improves process performance for Crystal growth, whether the growth method is Liquid Encapsulated Czochralski (LEC), Vertical Gradient Freeze (VGF), or Bridgman. The high purity and physical stability of this unique material also make it the best choice for auxiliary effusion cell hardware use.

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