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SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)


In stock
Item Number: SOI-2.5-1-625-1010
Specifications
 

Device Layer

Size:

 

10x10

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-0.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0 um +/-  0.1 um

 

Handle Wafers:

Type/Dopant

P type/B-doped

Orientation

 

<1-0-0>+/-0.5 degree

Resistivity:

10-20 ohm.cm

Thickness:

 

625 +/- 15 um

Finish:

 

As received (not polished)

 

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